PriMera Scientific Engineering (ISSN: 2834-2550)

Research Article

Volume 9 Issue 3

Temperature-Dependent Optical and Electrical Properties of GaAs Thin Films for Antireflection and Solar-Cell Applications

P Arockia Michael Mercy*

September 02, 2026

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Abstract

Gallium arsenide (GaAs) is a direct-band-gap III-V semiconductor with strong optical absorption and high radiation tolerance, making it attractive for photovoltaic and optoelectronic applications. This work examines the influence of temperature and film thickness on the optical and electrical properties of GaAs over the visible to near-infrared spectral region. Transmittance and reflectance measurements are used to evaluate the absorption coefficient, optical band-gap energy, refractive index, extinction coefficient, dielectric response, carrier concentration, conductivity and resistivity. The temperature-dependent analysis is considered over approximately 55-973 K, while the optical measurements cover about 400-1200 nm. The results indicate that temperature substantially modifies the band gap and free-carrier concentration, while an appropriately selected antireflection-coating thickness can suppress optical reflection and improve transmission. The study therefore provides a practical basis for tuning GaAs optical surfaces for photovoltaic and electronic-device applications. The revised manuscript also separates GaAs-specific analysis from general multilayer antireflection theory so that the experimental interpretation remains consistent with the investigated material.

Keywords: GaAs; Optical properties; temperature dependence; band gap; refractive index; reflectance; transmittance; carrier concentration; antireflection coating; photovoltaic applications

References

  1. Sze SM and Ng KK. “Physics of Semiconductor Devices”. 3rd ed., Wiley, Hoboken, NJ (2007).
  2. Casey HC Jr and Panish MB. “Heterostructure Lasers”. Academic Press, New York (1978).
  3. Blakemore JS. “Semiconducting and other major properties of gallium arsenide”. J. Appl. Phys 53 (1982): R123-R181.
  4. Aspnes DE and Studna AA. “Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV”. Phys. Rev. B 27 (1983): 985-1009.
  5. Panish MB and Casey HC Jr. “Temperature dependence of the energy gap in GaAs and GaP”. J. Appl. Phys. 40 (1969): 163-167.
  6. Benkabou A, El Hajjaji A and El Khakani MA. “Temperature dependence of the optical and lattice vibration properties in gallium arsenide”. Optik 176 (2019): 366-371.
  7. McCaulley JA, et al. “Temperature dependence of the near-infrared refractive index of silicon, gallium arsenide, and indium phosphide”. Phys. Rev. B 49 (1994): 7408-7417.
  8. Yao H, Snyder PG and Woollam JA. “Temperature dependence of optical properties of GaAs”. J. Appl. Phys 70 (1991): 3261-3267.
  9. Macleod HA. “Thin-Film Optical Filters”. 4th ed., CRC Press, Boca Raton, FL (2010).
  10. Born M and Wolf E. “Principles of Optics: Electromagnetic Theory of Propagation, Interference and Diffraction of Light”. 7th ed., Cambridge University Press, Cambridge (1999).
  11. Pankove JI. “Optical Processes in Semiconductors”. Prentice-Hall, Englewood Cliffs, NJ (1971).
  12. Swanepoel R. “Determination of the thickness and optical constants of amorphous silicon”. J. Phys. E: Sci. Instrum 16 (1983): 1214-1222.
  13. Panish MB and Casey HC Jr. “Temperature dependence of the energy gap in GaAs and GaP”. J. Appl. Phys 40 (1969): 163-167.
  14. Benamar A, Boukraa M and Zaoui A. “Temperature dependence of the optical and lattice vibration properties in gallium arsenide”. Optik 176 (2019): 366-371.
  15. Fréchette LH, et al. “Antireflective coatings: Conventional stacking layers and ultrathin plasmonic metasurfaces—A mini-review”. Materials 9 (2016): 497.
  16. Wang X., et al. “Multilayer anti-reflective coating with ultra-low refractive index SiO₂ nanopillars for high efficiency multi-junction GaAs solar cells”. Solar Energy Materials and Solar Cells 266 (2024): 112679.
  17. Lohithakshan LC and Kannan P. “Realisation of optical filters using multi-layered thin film coatings by transfer matrix model simulations”. Materials Today: Proceedings (2022).
  18. Sze SM and Ng KK. “Physics of Semiconductor Devices”. 3rd ed., Wiley, Hoboken, NJ (2007).
  19. Madelung O. “Semiconductors: Data Handbook”. 3rd ed., Springer, Berlin (2004).
  20. Vurgaftman I, Meyer JR and Ram-Mohan LR. “Band parameters for III-V compound semiconductors and their alloys”. Journal of Applied Physics 89 (2001): 5815-5875.
  21. Hervé PJL and Vandamme LKJ. “General relation between refractive index and energy gap in semiconductors”. Infrared Physics & Technology 35 (1994): 609-615.
  22. Panish MB and Casey HC. “Temperature dependence of the energy gap in GaAs and GaP”. Journal of Applied Physics 40.1 (1969): 163-167.
  23. Panish MB and Casey HC. “Temperature dependence of the energy gap in GaAs and GaP”. J. Appl. Phys 40 (1969): 163-167.
  24. Born M. and Wolf E. “Principles of Optics”. 7th ed., Cambridge University Press (1994).
  25. Hecht E. “Optics”. 4th ed., Pearson Education (2002).
  26. Sze SM and Ng KK. “Physics of Semiconductor Devices”. 3rd ed., Wiley-Interscience (2006).